Semiconductor Power Devices: Volume 1: Physics, Technology and Design of Power Devices, (Hardcover)
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Product details
| Management number | 238634015 | Release Date | 2026/07/11 | List Price | $120.00 | Model Number | 238634015 | ||
|---|---|---|---|---|---|---|---|---|---|
| Category | |||||||||
This new edition of the book Semiconductor Power Devices is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of the physical principles essential for understanding modern power devices. The complementation of the classical pn-theory regarding high-injection behavior and the description of emitters by H. Schlangenotto is now rounded off, displayed in newly written Sections. For IGBTs, new structures with strong carrier confinement are added. New are special chapters on SiC devices and GaN devices. In the SiC chapter, the bipolar mode of the MOSFET body diode and its reverse recovery is discussed for the first time. <p></p> The edition provides extended content offering significant updates compared to previous editions.<p></p>
- Semiconductor Power Devices: Volume 1: Physics, Technology and Design of Power Devices, (Hardcover)
- Author: Josef Lutz
- ISBN: 9783032156952
- Format: Hardcover
- Publication Date: 2026-09-13
- Page Count: 565
| Book format | Hardcover |
|---|---|
| Fiction/nonfiction | Non-Fiction |
| Genre | Computing & Internet |
| Publication date | July, 2026 |
| Pages | 565 |
| Subgenre | Electronics |
| Series title | No Series |
| Number in series | 0 |
| Edition | 3rd third 2026 Edition |
| Publisher | Springer Nature Switzerland |
| Original languages | English |
| Language | English |
| Edu focus | Physics, Technology |
| Is collectible | N |
| Binding type | Case Binding |
| Recording time | 0 min |
| Retail packaging | Single Piece |
| Assembled product dimensions (l x w x h) | 6.10 x 6.00 x 9.25 in |
| Assembled product weight | 1.25 lb |
| Bisac subject heading | Technology & Engineering |
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